发明名称 ELECTRONIC DEVICE
摘要 An electronic device includes a memory. The memory includes a first cell array including a plurality of flash memory cells, a first peripheral circuit suitable for controlling the first cell array, a second cell array including a plurality of variable resistance memory cells, and a second peripheral circuit suitable for controlling the second cell array. The first cell array, the first peripheral circuit, and the second peripheral circuit are formed at a first level over a surface of a semiconductor substrate, and the second cell array is disposed at a second level over the surface of a semiconductor substrate, the second level being higher than the first level. A portion of the second cell array overlaps in a plan view the second peripheral circuit and/or the first cell array.
申请公布号 US2015137066(A1) 申请公布日期 2015.05.21
申请号 US201414272188 申请日期 2014.05.07
申请人 SK hynix Inc. 发明人 LEE Hyung-Dong
分类号 H01L27/24;H01L45/00;H01L29/788 主分类号 H01L27/24
代理机构 代理人
主权项 1. An electronic device comprising a semiconductor memory unit, the semiconductor memory unit comprising: a first cell array including a plurality of flash memory cells disposed at a first level in a vertical direction to a substrate; a first peripheral circuit configured to control the first cell array and disposed at the first level; a second cell array including a plurality of variable resistance memory cells disposed at a second level which is higher than the first level in the vertical direction; and a second peripheral circuit configured to control the second cell array and disposed at the first level, wherein the second cell array overlaps the second peripheral circuit and the first cell array.
地址 Icheon-si KR