| 摘要 |
[Solution] A spin electronic memory of the present invention is characterized by being formed by laminating at least a pair of electrodes (1, 2), a first alloy layer (5) that is mainly composed of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe or Bi2Se3 and has a thickness of from 2 nm to 10 nm (inclusive), and a second alloy layer (4) that is mainly composed of an alloy represented by general formula (1). This spin electronic memory is also characterized by comprising recording layers (6a, 6b, 6c) that are arranged between the electrodes (1, 2) and a spin injection layer (7) which is formed of a magnetic material that is to be magnetized, and which injects spin-polarized electrons into the recording layers. M1-xTex (1) In formula (1), M represents a Ge atom, an Al atom or an Si atom, and x represents a number of 0.5 or more but less than 1. |
