ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide organoaminosilane precursors that can be used in various deposition processes for forming silicon-containing films via CVD, ALD or the like at temperatures of 550°C or less or at room temperature.SOLUTION: An organoaminosilane precursor is represented by one of the formulas A to E.