| 发明名称 |
SELF-ALIGNED DUAL-HEIGHT ISOLATION FOR BULK FINFET |
| 摘要 |
A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor substrate. A second isolation region is formed between the first group of fins and the second group of fins, the second isolation region extends through a portion of the first isolation region such that the first and second isolation regions are in direct contact and a height above the bulk semiconductor substrate of the second isolation region is greater than a height above the bulk semiconductor substrate of the first isolation region. |
| 申请公布号 |
US2015137308(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201314083571 |
申请日期 |
2013.11.19 |
| 申请人 |
International Business Machines Corporation ;Renesas Electronics Corporation ;GLOBALFOUNDRIES Inc. |
发明人 |
Akarvardar Murat Kerem;Bentley Steven John;Cheng Kangguo;Doris Bruce B.;Fronheiser Jody;Jacob Ajey Poovannummoottil;Khakifirooz Ali;Nagumo Toshiharu |
| 分类号 |
H01L27/088;H01L29/06;H01L21/8234;H01L21/762 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor structure, the method comprising:
forming a first isolation region between fins of a first group of fins and between fins of a second group of fins, the first and second group of fins being formed in a bulk semiconductor substrate; and forming a second isolation region between the first group of fins and the second group of fins, the second isolation region extending through a portion of the first isolation region such that the first and second isolation regions are in direct contact and a height above the bulk semiconductor substrate of the second isolation region is greater than a height above the bulk semiconductor substrate of the first isolation region. |
| 地址 |
Armonk NY US |
