发明名称 |
SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD FOR SOLID STATE IMAGING DEVICE |
摘要 |
There is provided a solid state imaging device according to the embodiment. The solid state imaging device includes an imaging area and an element isolation unit having a light shielding effect. In the imaging area, a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor layer. The element isolation unit is embedded so as to surround a light-receiving region of each photoelectric conversion element. A center position of an opening region surrounding the light-receiving region is positioned on the center side of the imaging area than a corresponding center position of the light-receiving region. |
申请公布号 |
US2015137299(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201414474608 |
申请日期 |
2014.09.02 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
YAMAGUCHI Tetsuya |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A solid state imaging device comprising:
an imaging area where a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor layer; and an element isolation unit for being embedded so as to surround a light-receiving region of each photoelectric conversion element and having a light shielding effect, wherein a center position of an opening region surrounding the light-receiving region is positioned on a center side of the imaging area than a corresponding center position of the light-receiving region. |
地址 |
Minato-ku JP |