发明名称 SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD FOR SOLID STATE IMAGING DEVICE
摘要 There is provided a solid state imaging device according to the embodiment. The solid state imaging device includes an imaging area and an element isolation unit having a light shielding effect. In the imaging area, a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor layer. The element isolation unit is embedded so as to surround a light-receiving region of each photoelectric conversion element. A center position of an opening region surrounding the light-receiving region is positioned on the center side of the imaging area than a corresponding center position of the light-receiving region.
申请公布号 US2015137299(A1) 申请公布日期 2015.05.21
申请号 US201414474608 申请日期 2014.09.02
申请人 Kabushiki Kaisha Toshiba 发明人 YAMAGUCHI Tetsuya
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid state imaging device comprising: an imaging area where a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor layer; and an element isolation unit for being embedded so as to surround a light-receiving region of each photoelectric conversion element and having a light shielding effect, wherein a center position of an opening region surrounding the light-receiving region is positioned on a center side of the imaging area than a corresponding center position of the light-receiving region.
地址 Minato-ku JP