发明名称 Transistor Component
摘要 A transistor component includes a semiconductor body, a first main electrode, a gate contact electrode, a plurality of transistor cells, and a plurality of gate electrodes. The semiconductor body has a drain region and a drift region of a first conduction type, and a body region of a second conduction type. The first main electrode is on a top side of the semiconductor body. The plurality of gate electrodes is electrically connected to the gate contact electrode and arranged successively in a first lateral direction. In the plurality, a first gate electrode is next to a second gate electrode. The first main electrode includes a first trench contact finger, between the first gate electrode and the second gate electrode, and a second trench contact finger, between the first gate electrode and the second gate electrode, electrically connecting the first main electrode to the body region.
申请公布号 US2015137223(A1) 申请公布日期 2015.05.21
申请号 US201314081375 申请日期 2013.11.15
申请人 Infineon Technologies Austria AG 发明人 Siemieniec Ralf;Hutzler Michael
分类号 H01L29/78;H01L29/423 主分类号 H01L29/78
代理机构 代理人
主权项 1. A transistor component comprising: a semiconductor body comprising, between a bottom side and a top side spaced distant from the bottom side in a vertical direction: a drain region of a first conduction type;a drift region of the first conduction type;a body region of a second conduction type complementary to the first conduction type; a first main electrode arranged on the top side; a gate contact electrode; a plurality of transistor cells; a plurality of gate trenches formed in the semiconductor body and arranged successively in a first lateral direction perpendicular to the vertical direction; and a plurality of gate electrodes each arranged in another one of the gate trenches and electrically connected to the gate contact electrode;wherein the plurality of gate electrodes comprises at least one first gate electrode arranged in a first one of the gate trenches and at least one second gate electrode arranged in a second one of the gate trenches; among all gate trenches of the transistor, a first gate trench and a second gate trench are nearest neighbors; and the first main electrode comprises a first trench contact finger and a second trench contact finger both arranged between the first gate trench and the second gate trench and electrically connecting the first main electrode to the body region.
地址 Villach AT