SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF FABRICATION

摘要

An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a Schottky metal layer disposed over the substrate adjacent the gate electrode. The Schottky metal layer includes a Schottky contact electrically coupled to the channel which provides a Schottky junction and at least one alignment mark disposed over the semiconductor substrate. A method for fabricating the semiconductor device includes creating an isolation region that defines an active region along an upper surface of a semiconductor substrate, forming a gate electrode over the semiconductor substrate in the active region, and forming a Schottky metal layer over the semiconductor substrate. Forming the Schottky metal layer includes forming at least one Schottky contact electrically coupled to the channel and providing a Schottky junction, and forming an alignment mark in the isolation region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate that includes an upper surface and a channel; a gate electrode disposed over the semiconductor substrate electrically coupled to the channel; and a Schottky metal layer disposed over the semiconductor substrate adjacent the gate electrode, wherein the Schottky metal layer includes a Schottky contact electrically coupled to the channel forming a Schottky junction and at least one alignment mark disposed over the semiconductor substrate.