发明名称 |
TFT SUBSTRATE AND METHOD OF REPAIRING THE SAME |
摘要 |
A thin film transistor (TFT) substrate includes; a substrate; a plurality of scan lines, disposed on the substrate; a plurality of data lines, disposed across the scan lines; a scan line insulting layer disposed between the scan lines and the data lines; a plurality of thin film transistors, each of thin film transistors disposed on an intersection of each scan line and each data, line; a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines; and a common electrode, disposed on the data line insulting a layer, and comprising a plurality of positioning through holes, wherein the positioning through holes expose the data line insulting layer, and are located right above the data lines. |
申请公布号 |
US2015137129(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201314142562 |
申请日期 |
2013.12.27 |
申请人 |
CHUNGHWA PICTURE TUBES, LTD. |
发明人 |
HSU Han-Tung |
分类号 |
H01L27/12;H01L29/43;H01L21/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor (TFT) substrate, comprising:
a substrate; a plurality of scan lines, disposed on the substrate; a plurality of data lines, disposed across the scan lines; a scan line insulting layer disposed between the scan lines and the data lines; a plurality of thin film transistors, each of thin film transistors disposed on an intersection of each scan line and each data line; a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines; and a common electrode, disposed above the data line insulting layer, and comprising a plurality of positioning through holes, wherein the positioning through holes are located right above the data lines. |
地址 |
Padeh City TW |