发明名称 PHOTORESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND COMPOUND
摘要 PROBLEM TO BE SOLVED: To provide a photoresist composition which is excellent in LWR performance, CDU performance, resolution, rectangularity of the cross-sectional shape, depth of focus, exposure margin and MEEF performance.SOLUTION: A photoresist composition contains a polymer having structural units containing a group of formula (1) and a radiation-sensitive acid generating agent. In formula (1), Rand Rare each independently a hydrogen atom or a 1-20C monovalent organic group, and at least one of Rand Ris a 1-20C monovalent organic group. The monovalent organic group of Rand Ris preferably an acid-dissociative group.
申请公布号 JP2015096932(A) 申请公布日期 2015.05.21
申请号 JP20130245494 申请日期 2013.11.27
申请人 JSR CORP 发明人 NII NORIYUKI;OSAKI HITOMI
分类号 G03F7/039;C08F30/02;G03F7/038;H01L21/027 主分类号 G03F7/039
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