| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a growth single crystal diamond substrate.SOLUTION: The production method of the growth single crystal diamond substrate includes steps of (a) preparing a first diamond substrate for presenting a (001) main surface (in this main surface, a boundary is defined on at least one <100> ridge, and a length of at least one <100> ridge is at least more than a ratio of 1.3 to 1 in any dimension of a surface orthogonal to at least one <100> ridge; and making a diamond material homoepitaxial growth on the (001) main surface of the diamond material surface on condition of chemical vapor deposition (CVD) (this diamond material grows in both vertical direction to the (001) main surface and a lateral direction from the (001) main surface. |
