发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD AND EQUIPMENT THEREOF |
摘要 |
A semiconductor manufacturing equipment includes a buffer chamber, a load port, a first chamber, and a second chamber respectively connected with the buffer chamber at a different side. The semiconductor manufacturing equipment also has a third chamber in the buffer chamber, the third chamber configured for cooling a wafer, and a single blade robot in the buffer chamber. Moreover, the semiconductor manufacturing equipment has a controller including a program, wherein the program elevates a wafer transfer priority for the first chamber and the second chamber higher than a wafer transfer priority for the third chamber. |
申请公布号 |
US2015140798(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201314080880 |
申请日期 |
2013.11.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
HSU FANG-YUE |
分类号 |
H01L21/677;C23C16/458;H01L29/51;C23C16/52;H01L21/02;H01L21/673 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor manufacturing method, comprising:
transferring a first wafer into a first chamber; surface treating the first wafer in the first chamber for a first duration; transferring the first wafer into a second chamber after the surface treating the first wafer in the first chamber being accomplished; annealing the first wafer in the second chamber for a second duration; transferring the first wafer from the second chamber into a third chamber after the annealing the first wafer in the second chamber being accomplished; cooling the first wafer in the third chamber for a third duration; transferring the first wafer into a load port after the cooling the first wafer in the third chamber being accomplished; transferring a second wafer into the first chamber; surface treating the second wafer in the first chamber for the first duration; and transferring the second wafer into the second chamber after the surface treating the second wafer in the first chamber being accomplished; wherein the transferring the second wafer into the second chamber after the surface treating the second wafer in the first chamber being accomplished is performed with a higher priority than the transferring the first wafer into a load port after the cooling the first wafer in the third chamber being accomplished. |
地址 |
Hsinchu TW |