发明名称 SEMICONDUCTOR MANUFACTURING METHOD AND EQUIPMENT THEREOF
摘要 A semiconductor manufacturing equipment includes a buffer chamber, a load port, a first chamber, and a second chamber respectively connected with the buffer chamber at a different side. The semiconductor manufacturing equipment also has a third chamber in the buffer chamber, the third chamber configured for cooling a wafer, and a single blade robot in the buffer chamber. Moreover, the semiconductor manufacturing equipment has a controller including a program, wherein the program elevates a wafer transfer priority for the first chamber and the second chamber higher than a wafer transfer priority for the third chamber.
申请公布号 US2015140798(A1) 申请公布日期 2015.05.21
申请号 US201314080880 申请日期 2013.11.15
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 HSU FANG-YUE
分类号 H01L21/677;C23C16/458;H01L29/51;C23C16/52;H01L21/02;H01L21/673 主分类号 H01L21/677
代理机构 代理人
主权项 1. A semiconductor manufacturing method, comprising: transferring a first wafer into a first chamber; surface treating the first wafer in the first chamber for a first duration; transferring the first wafer into a second chamber after the surface treating the first wafer in the first chamber being accomplished; annealing the first wafer in the second chamber for a second duration; transferring the first wafer from the second chamber into a third chamber after the annealing the first wafer in the second chamber being accomplished; cooling the first wafer in the third chamber for a third duration; transferring the first wafer into a load port after the cooling the first wafer in the third chamber being accomplished; transferring a second wafer into the first chamber; surface treating the second wafer in the first chamber for the first duration; and transferring the second wafer into the second chamber after the surface treating the second wafer in the first chamber being accomplished; wherein the transferring the second wafer into the second chamber after the surface treating the second wafer in the first chamber being accomplished is performed with a higher priority than the transferring the first wafer into a load port after the cooling the first wafer in the third chamber being accomplished.
地址 Hsinchu TW