METHODS OF SELECTIVELY DOPING CHALCOGENIDE MATERIALS AND METHODS OF FORMING SEMICONDUCTOR DEVICES

摘要

Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.

主权项

1. A method of selectively doping a chalcogenide material, comprising:
forming a chalcogenide material substantially free of a selected transition metal in contact with an insulative material; and exposing the chalcogenide material and the insulative material to a solution comprising the selected transition metal to diffuse the selected transition metal into the chalcogenide material without substantially diffusing the selected transition metal into the insulative material.