发明名称 |
Methods of Forming Gated Devices |
摘要 |
Some embodiments include methods of forming gated devices. An upper region of a semiconductor material is patterned into a plurality of walls that extend primarily along a first direction. The walls are spaced from one another by trenches that extend primarily along the first direction. Steps are formed along bottoms of the trenches. Gatelines are formed on the steps and along lower regions of the walls. After the gatelines are formed, the walls are patterned into spaced-apart pillars that have bottom regions below the gatelines. In some embodiments the gated devices may be transistors or thyristors. |
申请公布号 |
US2015140742(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201514601435 |
申请日期 |
2015.01.21 |
申请人 |
Micron Technology, inc. |
发明人 |
Pozzi Carlo;Mariani Marcello;Carnevale Gianpietro |
分类号 |
H01L21/8234;H01L21/8222;H01L21/3213;H01L21/308;H01L21/02;H01L29/66;H01L21/306 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Boise ID US |