Scalable 2D-Film CVD Synthesis

摘要

This patent relates to 1) primary tool designs for a chemical vapor deposition (CVD) synthesis system in the form of open tray stacks or more readily accessible, quasi-gas-tight enclosure boxes, to 2) system designs for low volume and high volume CVD graphene production, and to 3) methods for CVD graphene and other two-dimensional (2D) film CVD synthesis. Scaling of higher quality CVD 2D-film production is thereby enabled both in substrate size and productivity and at reduced costs. This invention provides a wider process window for CVD Synthesis of 2D films and, particularly of graphene films, thereby allowing increased film quality and/or production throughput.

主权项

1. A chemical vapor deposition system for synthesizing a two-dimensional film, comprising:
a) a primary reaction chamber; b) a gas delivery and exhaust system for delivering and exhausting at least one process gas to and from said primary reaction chamber; c) a heating system for heating said primary reaction chamber; and d) a primary tool located within said primary reaction chamber, said primary tool including a support plate, said support plate defining a flat planar surface for supporting a substrate thereon, said flat planar surface being exposed to said primary reaction chamber and said process gas flowing therethrough, said support plate being formed from a process compatible inert material having substantial non-wetting material properties when heated near the melting point of said substrate.