发明名称 |
GRADED DIELECTRIC STRUCTURES |
摘要 |
Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material. |
申请公布号 |
US2015137254(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201514607733 |
申请日期 |
2015.01.28 |
申请人 |
Micron Technology, Inc. |
发明人 |
Gealy F. Daniel;Bhat Vishwanath;Srividya Cancheepuram V.;Rocklein M. Noel |
分类号 |
H01L29/51;H01L49/02 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic device comprising:
a graded dielectric layer in an integrated circuit, the graded dielectric layer having one or more of a doping profile with the graded dielectric layer configured substantially as atomic monolayers across the graded dielectric layer or a structure profile that varies across the graded dielectric layer. |
地址 |
Boise ID US |