发明名称 GRADED DIELECTRIC STRUCTURES
摘要 Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
申请公布号 US2015137254(A1) 申请公布日期 2015.05.21
申请号 US201514607733 申请日期 2015.01.28
申请人 Micron Technology, Inc. 发明人 Gealy F. Daniel;Bhat Vishwanath;Srividya Cancheepuram V.;Rocklein M. Noel
分类号 H01L29/51;H01L49/02 主分类号 H01L29/51
代理机构 代理人
主权项 1. An electronic device comprising: a graded dielectric layer in an integrated circuit, the graded dielectric layer having one or more of a doping profile with the graded dielectric layer configured substantially as atomic monolayers across the graded dielectric layer or a structure profile that varies across the graded dielectric layer.
地址 Boise ID US