REACTION INDUCING UNIT, SUBSTRATE TREATING APPARATUS, AND THIN-FILM DEPOSITION METHOD

摘要

The present invention provides a substrate treating apparatus. The substrate treating apparatus of the present invention comprises: a process chamber; a substrate susceptor that is installed in the process chamber and connected to a rotating shaft to rotate and has a plurality of substrates placed on the same plane thereof; a heater member placed on the bottom surface of the substrate susceptor; and reaction inducing units for spraying gas onto treated surfaces of the substrates from the locations corresponding to the plurality of substrates placed on the substrate susceptor, wherein the reaction inducing units have a fluid channel with a multi-layer composite structure with at least three or more stacked plates.