HANDLER WAFER REMOVAL

摘要

A method of removing a handler wafer. There is provided a handler wafer and a semiconductor device wafer having a plurality of semiconductor devices, the semiconductor device wafer having an active surface side and an inactive surface side. An amorphous carbon layer is applied to a surface of the handler wafer. An adhesive layer is applied to at least one of the amorphous carbon layer of the handler wafer and the active surface side of the semiconductor device wafer. The handler wafer is joined to the semiconductor device wafer through the adhesive layer or layers. Laser radiation is applied to the handler wafer to cause heating of the amorphous carbon layer that in turn causes heating of the adhesive layer or layers. The plurality of semiconductor devices of the semiconductor device wafer are then separated from the handler wafer.