| 摘要 |
<p>A pixel structure, comprising: a transparent substrate (60), a gate line formed on the transparent substrate (60), a thin film transistor formed on the transparent substrate (60), a data line (68)formed on the transparent substrate (60)and a pixel electrode (62) formed on the transparent substrate (60) and the thin film transistor, a passivation layer (64) formed on the pixel electrode (62), the transparent substrate (60) and the data line (68), a common electrode (66) formed on the passivation layer (64); the passivation layer (64) comprises a first portion (72) on the data line (68) and a second portion (74) on the pixel electrode (62), and a third portion (76) on the transparent substrate (60) and on the two sides of the data line (68); the thickness of the first portion (72) is greater than the thickness of the third portion (74) of the passivation layer (64). Also provided is a pixel structure manufacturing method.</p> |
