发明名称 SYSTEMS AND METHODS FOR A SEMICONDUCTOR STRUCTURE HAVING MULTIPLE SEMICONDUCTOR-DEVICE LAYERS
摘要 A multilayer semiconductor device structure having different circuit functions on different semiconductor device layers is provided. The semiconductor structure comprises a first semiconductor device layer fabricated on a bulk substrate. The first semiconductor device layer comprises a first semiconductor device for performing a first circuit function. The first semiconductor device layer includes a patterned top surface of different materials. The semiconductor structure further comprises a second semiconductor device layer fabricated on a semiconductor-on-insulator (SOI) substrate. The second semiconductor device layer comprises a second semiconductor device for performing a second circuit function. The second circuit function is different from the first circuit function. A bonding surface coupled between the patterned top surface of the first semiconductor device layer and a bottom surface of the SOI substrate is included. The bottom surface of the SOI substrate is bonded to the patterned top surface of the first semiconductor device layer via the bonding surface.
申请公布号 KR20150055548(A) 申请公布日期 2015.05.21
申请号 KR20140149598 申请日期 2014.10.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN YI TANG;TSAI CHUN HSIUNG;WANN CLEMENT HSINGJEN
分类号 H01L21/82;H01L27/12 主分类号 H01L21/82
代理机构 代理人
主权项
地址