发明名称 ONE-TIME PROGRAMMABLE MEMORY AND SYSTEM-ON CHIP INCLUDING ONE-TIME PROGRAMMABLE MEMORY
摘要 A one-time programmable (OTP) memory includes an OTP cell array including a plurality of OTP cells that each include a programming transistor configured to change irreversibly when programmed; a temperature compensation reference voltage generating unit configured to sense a temperature of the OTP cell memory and generate a reference voltage such that as the sensed temperature changes, the reference voltage generated by the temperature compensation reference voltage generating unit changes in a manner that is inversely proportional the change in the sensed temperature; and a temperature compensation operating voltage generating unit configured to receive the reference voltage to generate an operating voltage that is proportional to the reference voltage and is applied to the OTP cell array.
申请公布号 US2015138870(A1) 申请公布日期 2015.05.21
申请号 US201414539605 申请日期 2014.11.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JOO Jong-Doo
分类号 G11C17/08 主分类号 G11C17/08
代理机构 代理人
主权项 1. An one-time programmable (OTP) memory comprising: an OTP cell array including a plurality of OTP cells that each include a programming transistor configured to change irreversibly when programmed; a temperature compensation reference voltage generating unit configured to sense a temperature of the OTP cell memory and generate a reference voltage such that as the sensed temperature changes, the reference voltage generated by the temperature compensation reference voltage generating unit changes in a manner that is inversely proportional to the change in the sensed temperature; and a temperature compensation operating voltage generating unit configured to receive the reference voltage to generate an operating voltage that is proportional to the reference voltage and is applied to the OTP cell array.
地址 Suwon-Si KR