METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR VERTICAL STRUCTURE LED CHIP

摘要

PROBLEM TO BE SOLVED: To provide a high-quality vertical LED chip which has few cracks in a light-emitting structure section.SOLUTION: A Group III nitride semiconductor vertical structure LED chip comprises such a structure for sandwiching, between a pair of electrodes: a conductive support section serving as a lower electrode; a connection layer provided on the support section; an ohmic electrode layer provided on the connection layer; and a light-emitting structure section which has a second conduction type Group III nitride semiconductor layer, a light-emitting layer provided on the second conduction type Group III nitride semiconductor layer and a first conduction type Group III nitride semiconductor layer that is provided on the light-emitting layer and has a conduction type different from that of the second conduction type. A plane of the light-emitting structure section has a circular shape or a 4n-angled shape (n is a positive integer) with rounded corners at a corner and a plane of the support section has such a shape as to be larger than and different from the plane of the light-emitting structure section.