al2o3 surface nucleation preparation with remote oxygen plasma

摘要

Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface.

主权项

1. A method comprising:
providing a substrate, wherein the substrate comprises semiconductor material; exposing a surface of the semiconductor material to a first activated species,
wherein the first activated species are generated using a plasma source,wherein the first activated species comprises H*; after exposing the surface of the semiconductor material to a first activated species, exposing the surface of the semiconductor material to a second activated species,
wherein the second activated species are generated using a plasma source,wherein the second activated species comprises O*; after exposing the surface of the semiconductor material to the second activated species, depositing a high-k dielectric layer on the surface of the semiconductor material.