发明名称 |
Method of Forming Fine Patterns |
摘要 |
A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The modifying layer is etched according to the first pattern of the photoresist layer. A treatment is performed to the etched modifying layer to form a second pattern, the second pattern having a smaller line width roughness (LWR) and/or line edge roughness (LER) than the first pattern. The second pattern is then etched into the substrate. |
申请公布号 |
US2015140826(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201514607988 |
申请日期 |
2015.01.28 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Chih Wei;Lee Chung-Ju;Bao Tien-I |
分类号 |
G03F7/20;G03F7/36;H01L21/311 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a fine pattern, comprising:
providing a substrate having a layer thereon; depositing a tri-layer photoresist on the layer, the tri-layer photoresist having a top surface and a bottom surface, the bottom surface being in contact with the layer; patterning the tri-layer photoresist from the top surface to the bottom surface; treating the patterned tri-layer photoresist to smooth surface roughness and edge roughness of the patterned tri-layer photoresist; and etching the layer using the smoothed tri-layer photoresist. |
地址 |
Hsin-Chu TW |