发明名称 Method of Forming Fine Patterns
摘要 A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The modifying layer is etched according to the first pattern of the photoresist layer. A treatment is performed to the etched modifying layer to form a second pattern, the second pattern having a smaller line width roughness (LWR) and/or line edge roughness (LER) than the first pattern. The second pattern is then etched into the substrate.
申请公布号 US2015140826(A1) 申请公布日期 2015.05.21
申请号 US201514607988 申请日期 2015.01.28
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lu Chih Wei;Lee Chung-Ju;Bao Tien-I
分类号 G03F7/20;G03F7/36;H01L21/311 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method of forming a fine pattern, comprising: providing a substrate having a layer thereon; depositing a tri-layer photoresist on the layer, the tri-layer photoresist having a top surface and a bottom surface, the bottom surface being in contact with the layer; patterning the tri-layer photoresist from the top surface to the bottom surface; treating the patterned tri-layer photoresist to smooth surface roughness and edge roughness of the patterned tri-layer photoresist; and etching the layer using the smoothed tri-layer photoresist.
地址 Hsin-Chu TW