Selector Device Using Low Leakage Dielectric MIMCAP Diode

摘要

MIMCAP diodes are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP diodes can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a barrier height modification layer, a low leakage dielectric layer and a high leakage dielectric layer. The layers can be sandwiched between two electrodes.

主权项

1. A method to form a device, the method comprising
forming a first layer,
wherein the first layer is operable as an electrode; forming a second layer disposed above the first layer,
wherein the second layer comprises a first dielectric; forming a third layer disposed above the first layer,
wherein the third layer comprises a second dielectric,wherein the first dielectric has a different band gap than the second dielectric; forming a fourth layer disposed above the first layer,
wherein the fourth layer comprises a third dielectric,wherein a leakage current of the fourth layer is higher than a leakage current of the third layer; and forming a fifth layer disposed above the first layer,
wherein the fifth layer is operable as an electrode;wherein the second layer, the third layer, and the fourth layer are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity;wherein the second polarity is opposite of the first polarity.