METHOD OF FABRICATION, DEVICE STRUCTURE AND SUBMOUNT COMPRISING DIAMOND ON METAL SUBSTRATE FOR THERMAL DISSIPATION

摘要

A method of fabrication, a device structure and a submount comprising high thermal conductivity (HTC) diamond on a HTC metal substrate, for thermal dissipation, are disclosed. The surface roughness of the diamond layer is controlled by depositing diamond on a sacrificial substrate, such as a polished silicon wafer, having a specific surface roughness. Following deposition of the diamond layer, an adhesion layer, e.g. comprising a refractory metal, such as tantalum, and at least one layer of HTC metal is provided. The HTC metal substrate is preferably copper or silver, and may be provided by electroforming metal onto a thin sputtered base layer, and optionally bonding another metal layer. The electrically non-conductive diamond layer has a smooth exposed surface, preferably ≦10 nm RMS, suitable for patterning of contact metallization and/or bonding to a semiconductor device. Methods are also disclosed for patterning the diamond on metal substrate to facilitate dicing.

主权项

1. A method for fabricating a device structure comprising a diamond on metal substrate for thermal dissipation, by steps comprising:
providing a sacrificial silicon substrate having a surface of a selected surface roughness, providing thereon a layer of high thermal conductivity (HTC) diamond; providing an adhesion layer on the layer of diamond; providing thereon at least one layer of high thermal conductivity (HTC) metal to form an HTC metal substrate; and removing the sacrificial substrate.