MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION

摘要

A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap.

主权项

1. A method for manufacturing a nanogap, the method comprising:
disposing an oxide on a wafer; disposing a nanowire on the oxide; applying a helium ion beam to taper the nanowire laterally into a first nanowire part and a second nanowire part, the first nanowire part and the second nanowire part forming a first nanogap in a nanodevice; wherein applying the helium ion beam to taper the nanowire laterally forms a bridge connecting the first nanowire part and the second nanowire part; and cutting a second nanogap in the bridge to form a first extension from the first nanowire part and form a second extension from the second nanowire part.