| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device is described, including a substrate including a first area and a second area, a first MOS element of a first conductivity type in the first area, and a second MOS element of the first conductivity type in the second area. The first area is closer to a pick-up region of the substrate than the second area. The substrate has a second conductivity type. The bottom depth of a first electrical conduction path in the substrate in the first area is smaller than that of a second electrical conduction path in the substrate in the second area. |
| 申请公布号 |
US2015137255(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201314082529 |
申请日期 |
2013.11.18 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Wen Yung-Ju;Wang Chang-Tzu;Tang Tien-Hao;Su Kuan-Cheng |
| 分类号 |
H01L27/02;H01L27/092 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate, including a first area and a second area, wherein the first area is closer to a pick-up region of the substrate than the second area; a first MOS element of a first conductivity type in the first area; and a second MOS element of the first conductivity type in the second area, wherein the substrate has a second conductivity type, and a first bottom depth of a first electrical conduction path in the substrate in the first area is smaller than a second bottom depth of a second electrical conduction path in the substrate in the second area. |
| 地址 |
Hsinchu TW |
