| 发明名称 |
REPLACEMENT METAL GATE FINFET |
| 摘要 |
A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer. |
| 申请公布号 |
US2015137245(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201514609803 |
申请日期 |
2015.01.30 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Jagannathan Hemanth;Mehta Sanjay C.;Wang Junli;Yeh Chun-Chen;Schmitz Stefan |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect transistor (FET) device, comprising:
a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region; a hardmask layer disposed on the top surface of the fin, over the channel region; a gate stack formed on the hardmask layer; and sidewall spacers adjacent sidewalls of the gate stack, wherein bottom surfaces of the sidewall spacers are formed on the hardmask layer. |
| 地址 |
Armonk NY US |
