| 发明名称 |
SEMICONDUCTOR DEVICE WITH A LOW-K SPACER AND METHOD OF FORMING THE SAME |
| 摘要 |
A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD on the RSD regions. |
| 申请公布号 |
US2015137240(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201414558904 |
申请日期 |
2014.12.03 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;La Tulipe, JR. Douglas C. |
| 分类号 |
H01L29/786;H01L29/51;H01L29/49;H01L29/08 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
a semiconductor substrate; a gate stack on the semiconductor substrate, the gate stack including a gate dielectric layer on the semiconductor substrate and a gate conductor layer on the gate dielectric layer; low-k spacers adjacent to the gate dielectric layer; raised source/drain (RSD) regions adjacent to the low-k spacers; and an ILD layer on the RSD regions and the low-k spacers, wherein the ILD layer overhangs the low-k spacers. |
| 地址 |
Armonk NY US |
