SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

The invention provides a semiconductor device, including: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region, wherein the first conductivity type is opposite to the second conductivity type; and a drain region formed in the drift region; a multiple reduced surface field (RESURF) structure embedded in the drift region of the substrate; and a gate dielectric layer having a thick portion formed over the substrate, wherein the gate dielectric includes at least a stepped-shape or a curved shape curved-shape formed thereon, and wherein the multiple RESURF structure is aligned with the thick portion of the gate dielectric layer.

主权项

1. A semiconductor device, comprising:
a substrate having a first conductivity type, comprising:
a body region having the first conductivity type;a source region formed in the body region;a drift region having a second conductivity type adjacent to the body region, wherein the first conductivity type is opposite to the second conductivity type; anda drain region formed in the drift region; a multiple reduced surface field (RESURF) structure embedded in the drift region of the substrate; and a gate dielectric layer having a thick portion formed over the substrate, wherein the gate dielectric comprises at least a stepped-shape or a curved-shape formed thereon, and wherein the multiple RESURF structure is aligned with the thick portion of the gate dielectric layer.