MEMORY DEVICE

摘要

According to example embodiments, a memory device includes a substrate, a channel region on the substrate, a plurality of gate electrode layers stacked on each other on the substrate, and a plurality of contact plugs. The gate electrode layers are adjacent to the channel region and extend in one direction to define a pad region. The gate electrode layers include first and second gate electrode layers. The contact plugs are connected to the gate electrode layers in the pad region. At least one of the contact plugs is electrically insulated from the from the first gate electrode layer and electrically connected to the second gate electrode layer by penetrating through the first gate electrode layer.

主权项

1. A memory device, comprising:
a substrate; a channel region on the substrate, the channel region extending in a direction perpendicular to an upper surface of the substrate; a plurality of gate electrode layers stacked on each other on the substrate, the plurality of gate electrode layers being adjacent to the channel region and extending in one direction to define a pad region, and the plurality of gate electrode layers including first and second gate electrode layers; and a plurality of contact plugs connected the plurality of gate electrode layers in the pad region, at least one of the plurality of contact plugs being electrically insulated from the first gate electrode layer and electrically connected to the second gate electrode layer by penetrating through the first gate electrode layer.