| 发明名称 |
HIGH DENSITY LINEAR CAPACITOR |
| 摘要 |
A methods for fabricating a capacitor structure includes fabricating polysilicon structures on a semiconductor substrate. The method further includes fabricating M1 to diffusion (MD) interconnects on the semiconductor substrate. The polysilicon structures are disposed in an interleaved arrangement with the MD interconnects. The method also includes selectively connecting the interleaved arrangement of the MD interconnects and/or the polysilicon structures as the capacitor structure. |
| 申请公布号 |
US2015137201(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201414264620 |
申请日期 |
2014.04.29 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
LEE Bruce Sokki;BAZARJANI Seyfollah Seyfollahi;DAI Liang |
| 分类号 |
H01L27/06;H01L49/02 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a capacitor structure, comprising:
fabricating a plurality of polysilicon structures on a semiconductor substrate; fabricating a plurality of M1 to diffusion (MD) interconnects on the semiconductor substrate, in which the plurality of polysilicon structures are disposed in an interleaved arrangement with the plurality of MD interconnects; and selectively connecting the interleaved arrangement of the plurality of MD interconnects and/or the plurality of polysilicon structures as the capacitor structure. |
| 地址 |
San Diego CA US |
