Gate Protection Caps and Method of Forming the Same

摘要

A structure includes a substrate, a gate structure over the substrate, a dielectric layer over the substrate, and a cap over a gate electrode of the gate structure. Top surfaces of the dielectric layer and gate electrode are co-planar. The gate structure extends a gate lateral distance between first and second gate structure sidewalls. The cap extends between first and second cap sidewalls. A first cap portion extends from a midline of the gate structure laterally towards the first gate structure sidewall and to the first cap sidewall a first cap lateral distance, and a second cap portion extends from the midline laterally towards the second gate structure sidewall and to the second cap sidewall a second cap lateral distance. The first cap lateral distance and the second cap lateral distance are at least half of the gate lateral distance.

主权项

1. A structure comprising:
a substrate; a gate structure over the substrate, the gate structure comprising a gate electrode and a gate dielectric, the gate structure extending laterally a gate lateral distance between a first gate structure sidewall and a second gate structure sidewall; a first dielectric layer over the substrate, a top surface of the first dielectric layer being co-planar with a top surface of the gate electrode; and a gate protection cap over the gate electrode, the gate protection cap extending laterally between a first cap sidewall and a second cap sidewall, a first cap portion extending from a midline of the gate structure laterally towards the first gate structure sidewall and to the first cap sidewall a first cap lateral distance, a second cap portion extending from the midline laterally towards the second gate structure sidewall and to the second cap sidewall a second cap lateral distance, the first cap lateral distance and the second cap lateral distance being at least half of the gate lateral distance.