| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
| 摘要 |
A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×1019 atoms/cm3, and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer. |
| 申请公布号 |
US2015137173(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201314400625 |
申请日期 |
2013.09.05 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
Komada Satoshi |
| 分类号 |
H01L33/32;H01L33/20;H01L33/02 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nitride semiconductor light-emitting element comprising:
a substrate; a first nitride semiconductor layer provided on said substrate; a light-emitting layer provided on said first nitride semiconductor layer; and a second nitride semiconductor layer provided on said light-emitting layer, wherein said first nitride semiconductor layer includes a high concentration silicon-doped layer in which silicon is doped at a high concentration of at least 2×1019 atoms/cm3 and a dislocation reduction layer for laterally bending a threading dislocation on said high concentration silicon-doped layer. |
| 地址 |
Osaka-shi, Osaka JP |
