发明名称 |
THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR REPAIRING THE SAME |
摘要 |
The present disclosure disclosed a thin-film transistor array substrate and a method for repairing the same. The array substrate comprises: a substrate; a plurality of common lines, configured on the substrate; a plurality of scan lines and data lines, arranged on the substrate with each scan line and data line perpendicular to each other, to form a plurality of pixel areas; a plurality of pixel elements including a main pixel electrode, a sub pixel electrode, and a charge sharing unit including a charge capacitor which provides a voltage difference between the main pixel electrode and the sub pixel electrode. When the charge capacitor is defective, an upper electrode or a lower electrode of the defective capacitor is disconnected from a circuit connected thereto. The method enables the repairing process faster and simpler, which is different from the traditional repairing means. The pixel element repaired can still work normally. |
申请公布号 |
US2015137128(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201414241392 |
申请日期 |
2014.01.17 |
申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO, LTD. |
发明人 |
Yi Zhiguang;Chang Tsung Lung |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for repairing a thin-film transistor array substrate, the array substrate comprising:
a substrate; a plurality of common lines, configured on the substrate; a plurality of scan lines and data lines, arranged on the substrate with each scan line and data line perpendicular to each other, to form a plurality of pixel areas; a plurality of pixel elements, configured in the pixel areas, wherein each pixel element includes: a main pixel electrode and a sub pixel electrode; and a charge sharing unit, electrically connected to the main pixel electrode and the sub pixel electrode, and including a charge capacitor which provides a voltage difference between the main pixel electrode and the sub pixel electrode; wherein, when the charge capacitor is defective, the method includes the step of disconnecting an upper electrode or a lower electrode of the defective capacitor from a circuit connected thereto to form electric insulation. |
地址 |
Shenzhen, Guangdong CN |