发明名称 RADIATION DETECTOR WITH AN ORGANIC PHOTODIODE
摘要 The present invention relates to a radiation detector with organic photodiodes and to a method of producing such a radiation detector. The TFT backplane (103, 104) is placed between the scintillator (101) and the organic photodiode layer stack (105, 106, 107, 108). This implies the use of transparent TFT-electronics, e.g., a-Si with back-thinned glass or an organic TFT on foil. The geometrical order enables a multitude of possible stack built- ups for OPDs and has advantages for encapsulation and manufacturing.
申请公布号 US2015137088(A1) 申请公布日期 2015.05.21
申请号 US201314402729 申请日期 2013.06.13
申请人 KONINKLIJKIE PHILIPS N.V. 发明人 Simon Matthias;Jorritsma Jorrit
分类号 H01L27/30;H01L51/44 主分类号 H01L27/30
代理机构 代理人
主权项 1. Radiation detector for an examination apparatus, the radiation detector comprising: a scintillator for receiving and absorbing incident radiation and for converting the incident radiation into photons; a thin-film transistor prepared on a substrate, the substrate being arranged between the thin-film transistor and the scintillator; a photoactive layer arranged at a side of the thin-film transistor facing away from the substrate.
地址 EINDHOVEN NL