发明名称 |
RADIATION DETECTOR WITH AN ORGANIC PHOTODIODE |
摘要 |
The present invention relates to a radiation detector with organic photodiodes and to a method of producing such a radiation detector. The TFT backplane (103, 104) is placed between the scintillator (101) and the organic photodiode layer stack (105, 106, 107, 108). This implies the use of transparent TFT-electronics, e.g., a-Si with back-thinned glass or an organic TFT on foil. The geometrical order enables a multitude of possible stack built- ups for OPDs and has advantages for encapsulation and manufacturing. |
申请公布号 |
US2015137088(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201314402729 |
申请日期 |
2013.06.13 |
申请人 |
KONINKLIJKIE PHILIPS N.V. |
发明人 |
Simon Matthias;Jorritsma Jorrit |
分类号 |
H01L27/30;H01L51/44 |
主分类号 |
H01L27/30 |
代理机构 |
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代理人 |
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主权项 |
1. Radiation detector for an examination apparatus, the radiation detector comprising:
a scintillator for receiving and absorbing incident radiation and for converting the incident radiation into photons; a thin-film transistor prepared on a substrate, the substrate being arranged between the thin-film transistor and the scintillator; a photoactive layer arranged at a side of the thin-film transistor facing away from the substrate. |
地址 |
EINDHOVEN NL |