| 发明名称 |
NANOWIRE MOSFET WITH DIFFERENT SILICIDES ON SOURCE AND DRAIN |
| 摘要 |
A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is formed on the source region, and a drain silicide is formed on the drain region. The source silicide is comprised of a first material that is different from a second material comprising the drain silicide. |
| 申请公布号 |
US2015137067(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201314084680 |
申请日期 |
2013.11.20 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
COLINGE JEAN-PIERRE;LIN CHENG-TUNG;CHING KUO-CHENG;DIAZ CARLOS H. |
| 分类号 |
H01L29/06;H01L21/28;H01L29/10;H01L29/78;H01L29/423;H01L29/66;H01L21/283 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a nanowire field effect transistor (FET) device, the method comprising:
forming a nanowire FET including a source region and a drain region, wherein the nanowire FET further includes a nanowire that connects the source region and the drain region; forming a source silicide on the source region; and forming a drain silicide on the drain region, wherein the source silicide is comprised of a first material that is different from a second material comprising the drain silicide. |
| 地址 |
Hsinchu TW |
