HIGH RECTIFYING RATIO DIODE

摘要

Devices and methods for forming a device are disclosed. The device includes a substrate and a selector diode disposed over the substrate. The diode includes first and second terminals. The first terminal is disposed between the second terminal and the substrate. The diode includes a Schottky Barrier (SB) disposed at about an interface of the first and second terminals. The SB includes a tunable SB height defined by a SB region having segregated dopants. The device includes a memory element disposed over and coupled to the selector diode.

主权项

1. A device comprising:
a substrate; a selector diode disposed on the substrate, wherein the diode comprises
first and second terminals, the first terminal is disposed between the second terminal and the substrate, anda Schottky Barrier (SB) disposed at about an interface of the first and second terminals, wherein the SB comprises a tunable SB height (SBH) for a desired rectifying ratio defined by a SB region having segregated dopants; and a memory element disposed over and coupled to the selector diode.