PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM

摘要

A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

主权项

1. A method of forming a photovoltaic device comprising:
providing a semiconductor substrate including a p-n junction with a p-type semiconductor portion and a n-type semiconductor portion one on top of the other, wherein an upper exposed surface of the semiconductor substrate represents a front side surface of the semiconductor substrate; forming a plurality of patterned antireflective coating layers on said front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger regions, said busbar region and said finger regions are comprised of exposed portions of the front side surface of the semiconductor substrate; placing a mask atop the plurality of patterned antireflective coating layers, said mask having a shape that mimics each patterned antireflective coating layer; electrodepositing a metal layer on said busbar region and the finger regions; removing the mask; and performing an anneal, wherein during said anneal metal atoms from said metal layer react with semiconductor atoms from said busbar region and said finger regions forming a metal semiconductor alloy.