MASK BLANK AND TRANSFER MASK

摘要

This mask blank is provided, on a substrate (10), with: a thin film (11) for forming a transfer pattern; a resist base film (12) that is formed of a resist base composition and provided on the thin film; a resist film (13) that is formed of a chemically amplified resist and provided on the resist base film (12); and a mixture film (14) that is provided so as to intervene between the resist base film (12) and the resist film (13). The resist base film (12) is configured such that the molecular weight thereof decreases from the thin film (11) side toward the resist film (13) side in the thickness direction, and has a low molecular weight region (12a) in the resist film (13)-side surface. The mixture film (14) is formed by mixing the components of the low molecular weight region (12a) with the components of the chemically amplified resist.