| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device, a memory controller and a memory system, which can control a defective area.SOLUTION: A nonvolatile semiconductor storage device comprises: an array including a first block and a second block each including a plurality of memory strings including n (n: natural number) memory cell capable of retaining data; and a peripheral circuit for controlling the array. The n first signal interconnections (CG) are arranged in the first block and m (n>m, m: natural number) second signal interconnections (CG) are arranged in the second block.</p> |
