METHOD OF DESIGNING FIN FIELD EFFECT TRANSISTOR (FINFET)-BASED CIRCUIT AND SYSTEM FOR IMPLEMENTING THE SAME

摘要

A method of designing a fin field effect transistor (FinFET)-based circuit includes designing, using a processor, a first circuit schematic design based on a performance specification, the first circuit schematic design is free of artificial elements, wherein the artificial elements are used to simulate electrical performance of the FinFET-based circuit. The method further includes modifying, using the processor, at least one device within the first circuit schematic design to form a second circuit schematic design taking the artificial elements into consideration. The method further includes performing a pre-layout simulation using the second circuit schematic and taking the artificial elements into consideration. The method further includes generating a layout, wherein the layout does not take the artificial elements into consideration, and performing a post-layout simulation, wherein the post-layout simulation does not take the artificial elements into consideration

主权项

1. A method of designing a fin field effect transistor (FinFET)-based circuit, the method comprising:
designing, using a processor, a first circuit schematic design based on a performance specification, the first circuit schematic design being free of artificial elements, wherein the artificial elements are used to simulate electrical performance of the FinFET-based circuit; modifying, using the processor, at least one device within the first circuit schematic design to form a second circuit schematic design taking the artificial elements into consideration; performing a pre-layout simulation using the second circuit schematic and taking the artificial elements into consideration; generating a layout, wherein the layout does not take the artificial elements into consideration ; and performing a post-layout simulation, wherein the post-layout simulation does not take the artificial elements into consideration.