发明名称 Low Latency Memory Access Control for Non-Volatile Memories
摘要 A memory is provided that comprises a bank of non-volatile memory cells configured into a plurality of banklets. Each banklet in the plurality of banklets can be enabled separately and independently of the other banklets in the bank of non-volatile memory cells. The memory further comprises peripheral banklet circuitry, coupled to the bank of a non-volatile memory array, that is configured to enable selected subsets of bit lines within a selected banklet within the plurality of banklets. Moreover, the memory comprises banklet select circuitry, coupled to the peripheral banklet circuitry, that is configured to select data associated with a selected banklet for reading out from the banklet or writing to the banklet.
申请公布号 US2015143020(A1) 申请公布日期 2015.05.21
申请号 US201314082624 申请日期 2013.11.18
申请人 International Business Machines Corporation 发明人 Ferreira Alexandre P.;Kuang Jente B.;Mukundan Janani;Rajamani Karthick
分类号 G11C8/12;G11C11/16 主分类号 G11C8/12
代理机构 代理人
主权项 1. A memory, comprising: a bank of non-volatile memory cells configured into a plurality of banklets, wherein each banklet in the plurality of banklets is separately able to be enabled independently of the other banklets in the bank of non-volatile memory cells; peripheral banklet circuitry, coupled to the bank of non-volatile memory cells, that is configured to enable selected subsets of bit lines within a selected banklet within the plurality of banklets; and banklet select circuitry, coupled to the peripheral banklet circuitry, that is configured to select data associated with a selected banklet for reading out from the banklet or writing to the banklet.
地址 Armonk NY US