| 发明名称 |
LIGHT-EMITTING DEVICE |
| 摘要 |
A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode. |
| 申请公布号 |
US2015137167(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201514589683 |
申请日期 |
2015.01.05 |
| 申请人 |
Epistar Corporation |
发明人 |
Hsu Tzu-Chieh;Tao Ching-San;Ou Chen;Hsieh Min-Hsun;Chen Chao-Hsing |
| 分类号 |
H01L33/24;H01L33/46;H01L33/60 |
主分类号 |
H01L33/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device comprising:
a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities such that an upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion of the first transparent conductive oxide layer; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode. |
| 地址 |
Hsinchu City TW |
