发光二极体晶粒及其制造方法,申请号TW102101267-传众专利搜索

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发明名称	发光二极体晶粒及其制造方法
摘要
申请公布号	TWI485881	申请公布日期	2015.05.21
申请号	TW102101267	申请日期	2013.01.14
申请人	荣创能源科技股份有限公司	发明人	林雅雯;邱镜学;凃博闵;黄世晟
分类号	H01L33/04	主分类号	H01L33/04
代理机构		代理人
主权项	一种发光二极体晶粒，包括依次设置的第一半导体层、有源层和第二半导体层，其改良在于：所述发光二极体晶粒还包括形成于所述第二半导体层内的复数奈米碳管结构，所述奈米碳管结构外表面完全被所述第二半导体层所贴设。
地址	新竹县湖口乡新竹工业区工业五路13号

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