| 摘要 |
<p>The present invention relates to atomic layer deposition and can increase the efficiency of an atomic layer deposition process by arranging a plurality of unit process chambers for the atomic layer deposition process in a stack form, the unit process chambers having upper and lower parts which can be separated and combined, and by connecting feeding and discharge chambers for feeding and discharging substrates on which an atomic layer is to be deposited into and from a process chamber in a straight-line form with the process chamber such that the substrates are transferred in an order of the feeding chamber, the process chamber and the discharge chamber to continuously perform the process. In addition, by connecting a plurality of atomic layer deposition apparatuses in a straight-line form or connecting a plurality of atomic layer deposition apparatuses at both sides of the feeding and discharge chambers in a straight-line form, even when a ceiling height of a space in which the atomic layer deposition apparatuses are mounted is restricted, a plurality of process chambers can be secured, and thereby improving productivity and process efficiency. In addition, according to characteristics of types, thicknesses and the like of thin films, an evaporation process can be performed by partitioning an evaporation thickness formed in each process chamber, or various composite thin-films such as a first thin film, a second thin film, a third thin film and the like can be formed.</p> |
