| 摘要 |
(OBJECTIVE) Provided is a light emitting element and a light emitting device capable of miniaturization and improving heat resistance. (SOLUTION) A light emitting element (10), for examples, includes a semiconductor light emitting element (12) formed on one side of a substrate (11) and a photoresist layer (13) formed on the other side of the substrate (11). The photoresist layer (13), for examples, is formed by performing a thermal process under a temperature of 500 °C or less or reaction in room temperature after the raw material of a photoresist layer is applied. The photoresist layer includes a photoresist material and the raw material of a binder such as silicon oxide precursor which is changed into silicon oxide by oxidation or hydrolysis. |
