| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a substrate having highly reliable Local SOI structure at low cost. <P>SOLUTION: A manufacturing method of a Local SOI semiconductor substrate comprises: a semiconductor layer formation step of sequentially forming, on a substrate 10 of a first semiconductor, a layer of a second semiconductor and a layer 12 of the first semiconductor by crystal growth; an opening region formation step of forming an opening region 13 by removing the layer of the second semiconductor by etching; a delayed oxidation film deposition step of depositing a delayed oxidation film 14 formed of a material including a nitride film, a carbide film or an oxide film on the opening region such that a film thickness at an inlet port of the opening region becomes a predetermined film thickness; and a thermal oxidation step of forming a thermal oxide film 15 in the opening region by thermal oxidation of a part of the first semiconductor included in the substrate of the first semiconductor and the layer of the first semiconductor. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
