| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dry etching method which allows low taper angle by employing an inclined structure of two steps or more in the etching sidewall, and simplification of the peeling process after etching. <P>SOLUTION: When forming a recess in an SiC substrate by dry etching only of SF<SB POS="POST">6</SB>or of a mixed gas of SF<SB POS="POST">6</SB>and Ar, post-baking is performed 1-5 min at a temperature of 130°C-160°C after resist development as an etching mask, and the ratio of substrate application bias power and antenna power (substrate application bias power/antenna power) is set at 0.01-0.1. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
