COMPOSITION FOR POST CMP CLEANING

摘要

The present invention relates to a composition for post-CMP cleaning, and more specifically, to a composition for post-CMP cleaning, which is used for a process of washing a semiconductor substrate including metallic wiring and a metallic thin film, and especially a process of cleaning a semiconductor substrate whose metallic wiring is exposed after chemical mechanical polishing (CMP), regarding a semiconductor manufacturing process. According to the cleaning composition of the present invention can manufacture an excellent semiconductor since impurities attached to the surface of a semiconductor workpiece can be effectively removed, do not cause damage to metallic wiring, do not remain on the surface after washing, and accordingly do not contaminate the semiconductor workpiece. The composition for post-CMP cleaning comprises: tetraalkyl ammonium hydroxide; ascorbic acid; citric acid; and deionized water.